| PART |
Description |
Maker |
| 2SK307407 2SK3074 |
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| 2SK3074 EE08686 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
From old datasheet system
RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| 2SK307507 2SK3075 |
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| VFT30-28 ASI10703 VTF30-28 VFT3028 |
N-Channel Enhancement Mode VHF POWER MOSFET
VHF POWER MOSFET N-Channel Enhancement Mode
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| MMBTH10-4LT1 MMBTH10L MMBTH10LT1G MMBTH10LT1 |
Small Signal VHF Mixer
VHF/UHF Transistor (NPN Silicon)
|
ONSEMI[ON Semiconductor]
|
| MS1337 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 30; P(in) (W): 3; Gain (dB): 10; Vcc (V): 12.5; Cob (pF): 120; fO (MHz): 0; Case Style: M113 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| VFT300-2807 |
VHF POWER MOSFET
|
Advanced Semiconductor
|
| BAT68-04W BAT68-05W BAT68-06W BAT68W |
Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high speed switching) SILICON, VHF-UHF BAND, MIXER DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| VFT45-28 VFT45-2807 |
VHF POWER MOSFET
Transistor
|
Advanced Semiconductor
ASI
|
| ASI10710 VFT300-50 |
VHF POWER MOSFET N-Channel Enhancement Mode
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| ASI10704 VFT45-28 |
VHF POWER MOSFET N-Channel Enhancement Mode
|
ASI[Advanced Semiconductor]
|
| 2N5486G 2N605206 2N6071A06 2N6059 2N6052 2N6058 |
JFET VHF/UHF Amplifiers N?Channel - Depletion
Darlington Complementary Silicon Power Transistors
Sensitive Gate Triacs Silicon Bidirectional Thyristors
|
ONSEMI[ON Semiconductor]
|
